FQA9N90_F109
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
900V N沟道MOSFET 900V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 8.6A, 900V, RDSon = 1.3Ω @VGS = 10 V
• Low gate charge typical 55 nC
• Low Crss typical 25pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant