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FCPF11N60F

FCPF11N60F

数据手册.pdf
Fairchild 飞兆/仙童 分立器件

600V N沟道MOSFET 600V N-Channel MOSFET

Description

SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features

• 650V @TJ= 150°C

•Typ. RDSon= 0.32Ω

• Fast Recovery Type trr= 120ns

• Ultra Low Gate Charge typ. Qg = 40nC

• Low Effective Output Capacitance typ. Coss eff.=95pF

• 100% avalanche tested

FCPF11N60F中文资料参数规格
技术参数

额定电压DC 600 V

额定电流 11.0 A

通道数 1

漏源极电阻 380 mΩ

极性 N-Channel

耗散功率 125 W

输入电容 1.15 nF

栅电荷 40.0 nC

漏源极电压Vds 600 V

漏源击穿电压 600 V

栅源击穿电压 ±30.0 V

连续漏极电流Ids 11.0 A

上升时间 98 ns

输入电容Ciss 1490pF @25VVds

额定功率Max 36 W

下降时间 56 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 36W Tc

封装参数

安装方式 Through Hole

封装 TO-220-3

外形尺寸

长度 10.36 mm

宽度 4.9 mm

高度 16.07 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

FCPF11N60F引脚图与封装图
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