FCPF11N60F
数据手册.pdf600V N沟道MOSFET 600V N-Channel MOSFET
Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features
• 650V @TJ= 150°C
•Typ. RDSon= 0.32Ω
• Fast Recovery Type trr= 120ns
• Ultra Low Gate Charge typ. Qg = 40nC
• Low Effective Output Capacitance typ. Coss eff.=95pF
• 100% avalanche tested