FCD9N60NTM
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FCD9N60NTM 功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
The is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 17.8nC
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- Low effective output capacitance Coss.eff = 122pF
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- 100% avalanche tested