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FDMQ8203
Fairchild 飞兆/仙童 分立器件

FAIRCHILD SEMICONDUCTOR  FDMQ8203  双路场效应管, MOSFET, N和P沟道, 6 A, 100 V, 0.085 ohm, 10 V, 3 V

The is a 100V Dual N-channel and Dual P-channel PowerTrench® MOSFET, GreenBridge™ series of high-efficiency bridge rectifiers provides ten-fold improvement in power dissipation over diode bridge. Used in bridge rectifier applications. Specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.

FDMQ8203中文资料参数规格
技术参数

通道数 2

针脚数 12

漏源极电阻 0.085 Ω

极性 N-Channel, P-Channel

耗散功率 22 W

阈值电压 3 V

漏源极电压Vds 100 V

漏源击穿电压 ±100 V

连续漏极电流Ids 3.4A/2.6A

输入电容Ciss 210pF @50VVds

额定功率Max 2.5 W

工作温度Max 150 ℃

封装参数

安装方式 Surface Mount

引脚数 12

封装 MLP-12

外形尺寸

长度 5 mm

宽度 4.5 mm

高度 0.8 mm

封装 MLP-12

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

FDMQ8203引脚图与封装图
FDMQ8203引脚图

FDMQ8203引脚图

FDMQ8203封装焊盘图

FDMQ8203封装焊盘图

在线购买FDMQ8203
型号 制造商 描述 购买
FDMQ8203 Fairchild 飞兆/仙童 FAIRCHILD SEMICONDUCTOR  FDMQ8203  双路场效应管, MOSFET, N和P沟道, 6 A, 100 V, 0.085 ohm, 10 V, 3 V 搜索库存