FDD6688S

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6688S includes an integrated Schottky diode using ’s monolithic SyncFET technology.

Features

• 88 A, 30 V. RDSON = 5.1 mΩ @ VGS = 10 V

                 RDSON = 6.3 mΩ @ VGS = 4.5 V

• Low gate charge 31 nC typical

• Fast switching

• High performance trench technology for extremely low RDSON

Applications

• DC/DC converter

• Motor Drives