FQP47P06
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQP47P06 晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V 新
The is a -60V P-channel QFET® MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
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- Low gate charge typical 84nC
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- Low Crss typical 320pF
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- 100% Avalanche tested
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- ±25V Gate to source voltage
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- 62.5°C/W Thermal resistance, junction to ambient
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- 0.94°C/W Thermal resistance, junction to case
