FCP11N60N

FAIRCHILD SEMICONDUCTOR  FCP11N60N  功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V

Description

The SupreMOS MOSFET, ’s next generation of high voltage super-junction MOSFETs,employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

Features

•RDSon = 0.255Ω Typ.@ VGS= 10V, ID= 5.4A

• Ultra Low Gate Charge Typ. Qg = 27.4nC

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant