FQPF45N15V2

150V N沟道MOSFET 150V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rdson is required.

Features

• 45A, 150V, RDSon = 0.04Ω @VGS = 10 V

• Low gate charge typical 72 nC

• Low Crss typical 135 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability