FDMS86201

FAIRCHILD SEMICONDUCTOR  FDMS86201  晶体管, MOSFET, N沟道, 35 A, 120 V, 0.0096 ohm, 10 V, 2.6 V

The is a N-channel MOSFET is produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.

.

Shielded gate MOSFET technology

.

Advanced package and silicon combination for low RDS ON and high efficiency

.

MSL1 Robust package design

.

100% UIL tested