FQPF8N80C
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQPF8N80C 功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
The is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
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- Low gate charge
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- 100% Avalanche tested
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- Improved system reliability in PFC and soft switching topologies
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- Switching loss improvements
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- Lower conduction loss