FDD6670AS

30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET

General Description

The is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

Features

• 76 A, 30 V  RDSONmax= 8.0 mΩ@ VGS= 10 V

                  RDSONmax= 10.4 mΩ@ VGS= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge 29nC typical

• High performance trench technology for extremely low RDSON

• High power and current handling capability

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Applications

• DC/DC converter

• Low side notebook