FQA28N15
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQA28N15 晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
The is a 150V N-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
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- Low gate charge
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- 100% Avalanche tested
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- 175°C Rated junction temperature