FDD5N50NZFTM

UniFET™ N 通道 MOSFET，Fairchild SemiconductorUniFET™ MOSFET 是 Fairchild Semiconductor 的高电压 MOSFET 系列。 它平面 MOSFET 中具有最小通态电阻，还提供卓越的切换性能和较高雪崩能量强度。 此外，内部栅极-源极 ESD 二极管让 UniFET-II™ MOSFET 可以耐受超过 2000V HBM 浪涌应力。 UniFET™ MOSFET 适用于开关电源转换器应用，如功率因数校正 PFC、平板显示屏 FPD 电视电源、ATX（先进技术扩展）和电子灯镇流器。

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features

• RDSon = 1.47Ω Typ.@ VGS = 10V, ID = 1.85A

• Low Gate Charge Typ. 9nC

• Low Crss Typ. 4pF

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Imoroved Capability

• RoHS Compliant