FQP19N20C
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQP19N20C. 晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
The is a 200V N-channel QFET® MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge typical 40.5nC
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- Low Crss typical 85pF
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- 100% Avalanche tested
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- ±30V Gate to source voltage
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- 62.5°C/W Thermal resistance, junction to ambient
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- 0.9°C/W Thermal resistance, junction to case