FQU5N60CTU

N沟道MOSFET QFET 600 V ， 2.8 A， 2.5欧姆 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 2.8A, 600V, RDSon= 2.5Ω@VGS= 10 V

• Low gate charge typical 15 nC

• Low Crss typical 6.5 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability