FDS6692

30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 16V 最大漏极电流Id Drain Current| 12A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 14.5mΩ@ VGS = 4.5V, ID =11A 开启电压Vgs（th） Gate-Source Threshold Voltage| 1~3V 耗散功率Pd Power Dissipation| 2.5W Description & Applications| 30V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDSON and fast switching speed. Applications • DC/DC converter Features • Low gate charge • High performance trench technology for extremely low RDSON • High power and current handling capability 描述与应用| 30V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 •DC/ DC转换器 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •高功率和电流处理能力