FDD8878
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDD8878 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 4A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.015Ω/Ohm @3.5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.25V 耗散功率Pd Power Dissipation| 40W Description & Applications| N-Channel PowerTrench ®MOSFET 30V, 40A, 15mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDSON and fast switching speed. DSON= 15mΩ, VGS = 10V, ID = 35A DSON = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low DSON Low gate charge High power and current handling capability 描述与应用| N-沟道PowerTrench®MOSFET30V，40A，15MΩ 概述 这N沟道MOSFET已专门设计 提高整体效率的DC / DC转换器 同步或传统开关PWM 控制器。它已被优化的低门电荷，低 RDS（ON）和快速开关速度。 DS（ON）=15MΩ，VGS= 10V，ID= 35A DS（ON）=18.5mΩ，VGS= 4.5V，ID= 35A 高性能沟道技术极低 DS（ON） 低栅极电荷 高功率和电流处理能力