FDS6961A
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6961A.. 双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 90 mohm, 10 V, 1.8 V
General Description
These N-Channel Logic Level MOSFETs are produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching
performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
3.5 A, 30 V. RDSON = 0.090 W @ VGS = 10 V
RDSON = 0.140 W @ VGS = 4.5 V.
Fast switching speed.
Low gate charge 2.1nC typical.
High performance trench technology for extremely low RDSON.
High power and current handling capability.