FDN339AN
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDN339AN 晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.035Ω/Ohm @3A,4.5V 开启电压Vgs(th) Gate-Source Threshold Voltage| 0.4-1.5V 耗散功率Pd Power Dissipation| 500mW/0.5W Description & Applications| Low gate charge 7nC typical. • High performance trench technology for extremely low RDSON .• High power and current handlingcapability. 描述与应用| 低栅极电荷(典7nC)。 •高性能沟道技术极低的RDS(ON) •高功率和电流处理能力
得捷:
SMALL SIGNAL FIELD-EFFECT TRANSI
e络盟:
FAIRCHILD SEMICONDUCTOR FDN339AN 晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
艾睿:
Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R
富昌:
FDN339AN 系列 20 V 35 mOhm N 沟道 2.5 V 指定 PowerTrench Mosfet
TME:
Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Verical:
Trans MOSFET N-CH 20V 3A 3-Pin SuperSOT T/R
Win Source:
MOSFET N-CH 20V 3A SSOT3