FDC6306P

FAIRCHILD SEMICONDUCTOR  FDC6306P  双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -8V 最大漏极电流IdDrain Current| -1.9A 源漏极导通电阻RdsDrain-Source On-State Resistance| 250mΩ@ VGS = -2.5V, ID = -1.7A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4~-1.5V 耗散功率PdPower Dissipation| 960mW/0.96W Description & Applications| Dual P-Channel 2.5V Specified Power Trench MOSFET General Description These P-Channel low threshold 2.5V specified MOSFETs are produced using Semiconductor"s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Load switch • DC/DC converter • Motor driving Features • Low gate charge 3.5nC typical. • Fast switching speed. • High performance trench technology for extremely low RDSON • SuperSOTTM-6 package: small footprint 描述与应用| 双P沟道2.5V额定功率沟道MOSFET 概述 这些P沟道低阈值2.5V指定的MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 应用 •负荷开关 •DC/ DC转换器 •电机驱动 特点 •低栅极电荷（3.5nC典型值）。 •快速开关速度。 •高性能沟道技术极低的RDS（ON） •SuperSOTTM-6包装：占地面积小