FDN336P
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDN336P 晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| ±8V 最大漏极电流IdDrain Current| -1.3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.12Ω @-1.3A,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4~1.5V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| Single P-Channel 2.5V Specified Power Trench MOSFET .- .
- -1.3 A, -20 V. RDSON= 0.20 W @ VGS = -4.5 V RDSON = 0.27 W @ VGS= -2.5 V. * Low gate charge 3.6 nC typical.* High performance trench technology for extremely low RDSON.. 描述与应用| 单P沟道2.5V额定功率沟槽MOSFET。*-1.3 A，-20 V. RDS（ON）= 0.20 W @ VGS=-4.5 V RDS（ON）=0.27 W@ VGS= -2.5 V。*低栅极电荷（3.6 nC典型）。*高性能沟道技术极低的RDS（ON）