FDC6301N
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDC6301N.. 双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV
最大源漏极电压VdsDrain-Source Voltage| 25V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| 220mA/0.22A 源漏极导通电阻RdsDrain-Source On-State Resistance| 4Ω@ VGS = 4.5V, ID = 0.4A 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.65~1.5V 耗散功率PdPower Dissipation| 900mW/0.9W Description & Applications| Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using "s proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET"s can replace several digital transistors, with a variety of bias resistors. Features Very low level gate drive requirements allowing direct operation in 3V circuits 描述与应用| 双N沟道，数字FET 概述 这些双N沟道逻辑电平增强模式场效应都采用飞兆半导体专有的，高细胞密度，DMOS技术。这非常高密度的过程特别是针对减少已经设计的状态resistance.This设备的，尤其是低电压应用程序替换为数字晶体管。由于偏置电阻器不是必需的，这些N沟道FET的可以取代 一些数字晶体管，偏置电阻器的各种。 特点 非常低的水平栅极驱动要求可直接操作3V电路