FDG312P
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDG312P 晶体管, MOSFET, P沟道, 1.2 A, -20 V, 0.135 ohm, -4.5 V, 900 mV
最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -8V 最大漏极电流IdDrain Current| -1.2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 250mΩ@ VGS = -2.5V, ID = -1A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4~-1.5V 耗散功率PdPower Dissipation| 750mW/0.75W Description & Applications| P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDSON. • Compact industry standard SC70-6 surface mount package. 描述与应用| P沟道2.5V额定功率沟道MOSFET 概述 P沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 •低栅极电荷。 •高性能沟道技术极低的RDS（ON）。 •紧凑型工业标准SC70-6表面贴装封装。
