FDS6910
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6910 双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
The is a dual N-channel logic level MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate to source voltage
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- 7.5A Continuous drain current
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- 20A Pulsed drain current