FDS6680AS
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDS6680AS 晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
The is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low side switch Q2 is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. This product is general usage and suitable for many different applications.
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- Includes SyncFET Schottky body diode
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- High performance trench technology for extremely low RDS on
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- High power and current handling capability
