E28F001BX-B120

1Mbit 128K x 8 BOOT BLOCK FLASH MEMORY

’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor interface.

 High-Integration Blocked Architecture

    One 8 KB Boot Block w/Lock Out

    Two 4 KB Parameter Blocks

    One 112 KB Main Block

 100,000 Erase/Program Cycles Per Block

 Simplified Program and Erase

    Automated Algorithms via On-Chip Write State Machine WSM

 SRAM-Compatible Write Interface

 Deep Power-Down Mode

    0.05 mA ICC Typical

    0.8 mA IPP Typical

 12.0V g5% VPP

 High-Performance Read

    70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time

    5.0V g10% VCC

 Hardware Data Protection Feature

    Erase/Write Lockout during Power Transitions

 Advanced Packaging, JEDEC Pinouts

    32-Pin PDIP

    32-Lead PLCC, TSOP

 ETOXTM II Nonvolatile Flash Technology

    EPROM-Compatible Process Base

    High-Volume Manufacturing Experience

 Extended Temperature Options