DZT853-13
数据手册.pdfTRANS NPN 6A 100V MED PWR SOT223
- 双极 BJT - 单 NPN 130MHz 表面贴装型 SOT-223
得捷:
TRANS NPN 100V 6A SOT223-3
艾睿:
This NPN DZT853-13 general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 100V 6A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT NPN 100V 6A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT NPN 100V 6A 3000mW 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS NPN 100V 6A SOT223
DeviceMart:
TRANS NPN 6A 100V MED PWR SOT223