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DMC4050SSD-13

DMC4050SSD-13

数据手册.pdf
Diodes(美台) 分立器件

1个N沟道和1个P沟道 40V 5.3A

DMC4050SSD 40 V 5.3 A N & P Channel Enhancement Mode Mosfet - SOIC-8


得捷:
MOSFET N/P-CH 40V 5.3A 8SO


立创商城:
1个N沟道和1个P沟道 40V 5.3A


艾睿:
Compared to traditional transistors, DMC4050SSD-13 power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2140 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Allied Electronics:
40V Compl. Pair Enhancement MOSFET SOIC8


安富利:
Trans MOSFET N/P-CH 40V 5.8A 8-Pin SO T/R


TME:
Transistor: N/P-MOSFET; unipolar; 40/-40V; 5.8/-5.5A; 1.8W; SO8


Verical:
Trans MOSFET N/P-CH 40V 5.8A Automotive 8-Pin SO T/R


Win Source:
MOSFET N/P-CH 40V 5.3A 8SO


DeviceMart:
MOSFET N/P-CH 40V 4.2A SO8


DMC4050SSD-13中文资料参数规格
技术参数

额定功率 1.8 W

极性 N+P

耗散功率 2.14 W

漏源极电压Vds 40 V

连续漏极电流Ids 5.8A

输入电容Ciss 1790.8pF @20VVds

额定功率Max 1.25 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2140 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 4.95 mm

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

DMC4050SSD-13引脚图与封装图
暂无图片
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