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DMS2220LFDB-7

DMS2220LFDB-7

数据手册.pdf
Diodes(美台) 分立器件

Trans MOSFET P-CH 20V 3.5A 6Pin DFN EP T/R

MOSFET P-CH 20V 3.5A 6-DFN


得捷:
MOSFET P-CH 20V 3.5A 6-DFN


贸泽:
MOSFET 20V 3.5A P-CHNL


艾睿:
Compared to traditional transistors, DMS2220LFDB-7 power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET P-CH 20V 3.5A 6-Pin DFN EP T/R


Chip1Stop:
Trans MOSFET P-CH 20V 3.5A 6-Pin DFN-B EP T/R


Verical:
Trans MOSFET P-CH 20V 3.5A Automotive 6-Pin DFN-B EP T/R


DeviceMart:
MOSFET P-CH 20V 3.5A 6-DFN


Win Source:
MOSFET P-CH 20V 3.5A 6-DFN


DMS2220LFDB-7中文资料参数规格
技术参数

通道数 1

漏源极电阻 95 mΩ

极性 P-CH

耗散功率 1.4 W

漏源极电压Vds 20 V

漏源击穿电压 20 V

连续漏极电流Ids 3.5A

输入电容Ciss 632pF @10VVds

额定功率Max 1.4 W

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 1.4W Ta

封装参数

安装方式 Surface Mount

引脚数 6

封装 DFN-6

外形尺寸

长度 2 mm

宽度 2 mm

高度 0.56 mm

封装 DFN-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

DMS2220LFDB-7引脚图与封装图
DMS2220LFDB-7引脚图

DMS2220LFDB-7引脚图

DMS2220LFDB-7封装图

DMS2220LFDB-7封装图

DMS2220LFDB-7封装焊盘图

DMS2220LFDB-7封装焊盘图

在线购买DMS2220LFDB-7
型号 制造商 描述 购买
DMS2220LFDB-7 Diodes 美台 Trans MOSFET P-CH 20V 3.5A 6Pin DFN EP T/R 搜索库存