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DMC3025LSD-13

DMC3025LSD-13

数据手册.pdf
Diodes(美台) 分立器件

DMC3025LSD-13 编带

MOSFET - 阵列 N 和 P 沟道 30V 6.5A,4.2A 1.2W 表面贴装型 8-SO


得捷:
MOSFET N/P-CH 30V 6.5A/4.2A 8SO


立创商城:
DMC3025LSD-13


贸泽:
MOSFET 30V Comp ENH Mode 25 to 30V MosFET


艾睿:
Use Diodes Zetex&s;s DMC3025LSD-13 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Allied Electronics:
30V Complem. Enhancement MOSFET SOIC8


安富利:
Trans MOSFET N/P-CH 30V 6.5A/4.2A 8-Pin SO T/R


TME:
Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.5/-8.5A; 1.2W; SO8


Verical:
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive 8-Pin SO T/R


Win Source:
MOSFET N/P-CH 30V 6.5A/4.2A 8SO


DMC3025LSD-13中文资料参数规格
技术参数

额定功率 1.2 W

极性 N+P

耗散功率 1.5 W

漏源极电压Vds 30 V

连续漏极电流Ids 6.5A/4.2A

输入电容Ciss 501pF @15VVds

额定功率Max 1.2 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1500 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SO-8

外形尺寸

长度 4.95 mm

封装 SO-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

DMC3025LSD-13引脚图与封装图
DMC3025LSD-13引脚图

DMC3025LSD-13引脚图

DMC3025LSD-13封装图

DMC3025LSD-13封装图

DMC3025LSD-13封装焊盘图

DMC3025LSD-13封装焊盘图

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