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DF75R12W1H4FB11BOMA2

DF75R12W1H4FB11BOMA2

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V chopper IGBT modules with the proven PressFIT technology and High Speed IGBT H2.

Summary of Features:

.
High Speed IGBT H2
.
Low Switching Losses
.
CoolSiC™ Schottky diode 1200V
.
Al 2O 3 Substrate with Low Thermal Resistance
.
Integrated NTC temperature sensor
.
PressFIT Contact Technology

Benefits:

.
Compact design
.
Optimized customer’s development cycle time and cost
.
Configuration flexibility
DF75R12W1H4FB11BOMA2中文资料参数规格
技术参数

击穿电压集电极-发射极 1200 V

输入电容Cies 2nF @25V

额定功率Max 20 mW

封装参数

封装 AG-EASY1B-2

外形尺寸

封装 AG-EASY1B-2

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tray

制造应用 Solar

符合标准

RoHS标准

含铅标准 Lead Free

DF75R12W1H4FB11BOMA2引脚图与封装图
DF75R12W1H4FB11BOMA2电路图

DF75R12W1H4FB11BOMA2电路图

在线购买DF75R12W1H4FB11BOMA2
型号 制造商 描述 购买
DF75R12W1H4FB11BOMA2 Infineon 英飞凌 Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V chopper IGBT modules with the proven PressFIT technology and High Speed IGBT H2. 搜索库存