DF120R12W2H3_B27

IGBT 模块

Summary of Features:

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High Speed IGBT H3

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Low Switching Losses

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Fast Silicon diode 1200V

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Al2O3 Substrate with Low Thermal Resistance

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Integrated NTC temperature sensor

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PressFIT Contact Technology

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility