DFE252010F-8R2M=P2
数据手册.pdfmuRata(村田)
被动器件
功率电感SMD, 8.2 µH, 1 A, 绕线, 1.35 A, DFE252010F Series, 2.5mm x 2mm x 1mm
屏蔽 - 器 520 毫欧最大 1008(2520 公制)
得捷:
FIXED IND 8.2UH 1A 520 MOHM SMD
e络盟:
功率电感SMD, 8.2 µH, 1 A, 绕线, 1.35 A, DFE252010F Series, 2.5mm x 2mm x 1mm
艾睿:
Inductor Power Chip Shielded Wirewound 8.2uH 20% 1MHz Metal 1A 0.52Ohm DCR 1008 T/R
安富利:
Ind Power Chip Shielded Wirewound 8.2uH 20% 1MHz Metal 1A 1008 Emboss T/R
Verical:
Inductor Power Chip Shielded Wirewound 8.2uH 20% 1MHz Metal 1A 0.52Ohm DCR 1008 T/R