DN2535N5

Trans MOSFET N-CH 350V 0.5A 3Pin3+Tab TO-220

Advanced DMOS Technology

Not recommended for new designs. For products in TO-92 N3 package and TO-243AA N8 package, please use DN3535 or DN3545 instead.

These low threshold depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and ’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

❏ High input impedance

❏ Low input capacitance

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

Applications

❏ Normally-on switches

❏ Solid state relays

❏ Converters

❏ Linear amplifiers

❏ Constant current sources

❏ Power supply circuits

❏ Telecom