DS1250Y-70IND+

MAXIM INTEGRATED PRODUCTS  DS1250Y-70IND+  芯片, 存储器, NVRAM

静态 RAM，

### SRAM（静态随机存取存储器）

得捷:
IC NVSRAM 4MBIT PARALLEL 32EDIP

欧时:
Maxim DS1250Y-70IND+, 4096kbit SRAM 内存芯片, 512K x 8 位, 4.5 → 5.5 V, 32针 EDIP封装

贸泽:
NVRAM 4096K NV SRAM

安富利:
The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. DS1250 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Chip1Stop:
NVRAM NVSRAM Parallel 4M-Bit 5V 32-Pin EDIP

Newark:
# MAXIM INTEGRATED PRODUCTS  DS1250Y-70IND+  NVRAM, SRAM, 4 Mbit, 512K x 8bit, 70 ns

DeviceMart:
IC NVSRAM 4MBIT 70NS 32DIP

Win Source:
IC NVSRAM 4MBIT 70NS 32EDIP