CY7C109-20VC

128K ×8静态RAM 128K x 8 Static RAM

Functional Description

The CY7C109 / CY7C1009 is a high-performance CMOS stat ic RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1, an active HIGH chip enable CE2, an active LOW output enable OE, and three-state drivers. Writing to the device is accomplished by taking chip enable one CE1 and write enable WE inputs LOW and chip enable two CE2 input HIGH. Data on the eight I/O pins I/O0 through I/O7 is then written into the location specified on the address pins A0 through A16. Reading from the device is accomplished by taking chip enable one CE1 and output enable OE LOW while forcing write enable WE and chip enable two CE2 HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

Features

• High speed

   — tAA = 10 ns

• Low active power

   — 1017 mW max., 12 ns

• Low CMOS standby power

   — 55 mW max., 4 mW Low power version

• 2.0V Data Retention Low power version

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

• Easy memory expansion with CE1, CE2, and OE options