CPC5603CTR
数据手册.pdf
IXYS Semiconductor
分立器件
CPC 系列 223-SOT 表面贴装 350 V 5 mA N-沟道 耗尽型 FET
Description
The CPC5603C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.
Features
• Low on resistance 8 ohms
• Breakdown voltage 415V minimum
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card PCMCIA Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™ Data Access Arrangement DAA
• Telecom