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CY7C109B-15ZC

CY7C109B-15ZC

数据手册.pdf

128K ×8静态RAM 128K x 8 Static RAM

Functional Description[1]

The CY7C109B/CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy

memory expansion is provided by an active LOW Chip Enable CE1, an active HIGH Chip Enable CE2, an active LOW Output Enable OE, and three-state drivers. Writing to the device is accomplished by taking Chip Enable One CE1 and Write Enable WE inputs LOW and Chip Enable Two CE2 input HIGH. Data on the eight I/O pins I/O0 through I/O7 is  then written into the location specified on the address pins A0 through A16

Features

• High speed

— tAA = 12 ns

• Low active power

— 495 mW max. 12 ns

• Low CMOS standby power

— 55 mW max. 4 mW

• 2.0V Data Retention

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

• Easy memory expansion with CE1, CE2, and OE options

CY7C109B-15ZC中文资料参数规格
技术参数

电源电压DC 5.00 V, 5.50 V max

时钟频率 15.0 GHz

存取时间 15.0 ns

内存容量 1000000 B

电源电压 4.5V ~ 5.5V

封装参数

安装方式 Surface Mount

封装 TSOP-32

外形尺寸

封装 TSOP-32

物理参数

工作温度 0℃ ~ 70℃ TA

其他

产品生命周期 Unknown

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

CY7C109B-15ZC引脚图与封装图
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CY7C109B-15ZC Cypress Semiconductor 赛普拉斯 128K ×8静态RAM 128K x 8 Static RAM 搜索库存