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CY7C1441AV33-133AXI

CY7C1441AV33-133AXI

数据手册.pdf

36兆位( 1一M× 36/2的M×五百一十二分之一十八KX 72 )流通型SRAM 36-Mbit 1 M x 36/2 M x 18/512 k x 72 Flow-Through SRAM

SRAM - 同步,SDR 存储器 IC 36Mb(1M x 36) 并联 133 MHz 6.5 ns 100-TQFP(14x20)


艾睿:
SRAM Chip Sync Quad 3.3V 36M-Bit 1M x 36 6.5ns 100-Pin TQFP Tray


安富利:
The CY7C1441AV33 is 3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns 133-MHz version. A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK. The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable CE1, depth-expansion Chip Enables CE2 and CE3, Burst Control inputs ADSC, ADSP, and ADV, Write Enables BWx, and BWE, and Global Write GW. Asynchronous inputs include the Output Enable OE and the ZZ pin.The CY7C1441AV33 allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe ADSP or the cache Controller Address Strobe ADSC inputs. Address advancement is controlled by the Address Advancement ADV input. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin ADV.The CY7C1441AV33 operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.


Chip1Stop:
SRAM Chip Sync Quad 3.3V 36M-bit 1M x 36 6.5ns 100-Pin TQFP Tray


Verical:
SRAM Chip Sync Quad 3.3V 36M-bit 1M x 36 6.5ns 100-Pin TQFP Tray


DeviceMart:
IC SRAM 36MBIT 133MHZ 100LQFP


CY7C1441AV33-133AXI中文资料参数规格
技术参数

位数 36

存取时间 6.5 ns

存取时间Max 6.5 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 3.135V ~ 3.6V

电源电压Max 3.6 V

电源电压Min 3.135 V

封装参数

安装方式 Surface Mount

引脚数 100

封装 TQFP-100

外形尺寸

高度 1.4 mm

封装 TQFP-100

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Unknown

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

CY7C1441AV33-133AXI引脚图与封装图
暂无图片
在线购买CY7C1441AV33-133AXI
型号 制造商 描述 购买
CY7C1441AV33-133AXI Cypress Semiconductor 赛普拉斯 36兆位( 1一M× 36/2的M×五百一十二分之一十八KX 72 )流通型SRAM 36-Mbit 1 M x 36/2 M x 18/512 k x 72 Flow-Through SRAM 搜索库存
替代型号CY7C1441AV33-133AXI
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: CY7C1441AV33-133AXI

品牌: Cypress Semiconductor 赛普拉斯

封装: TQFP

当前型号

36兆位( 1一M× 36/2的M×五百一十二分之一十八KX 72 )流通型SRAM 36-Mbit 1 M x 36/2 M x 18/512 k x 72 Flow-Through SRAM

当前型号

型号: CY7C1441KV33-133AXI

品牌: 赛普拉斯

封装: LQFP

完全替代

SRAM, 36 Mbit, 1M x 36bit, 3.135V 至 3.6V, TQFP, 100 引脚, 6.5 ns

CY7C1441AV33-133AXI和CY7C1441KV33-133AXI的区别

型号: CY7C1441AV33-133AXC

品牌: 赛普拉斯

封装: 100TQFP 36000000B 3.3V 133us 100Pin

类似代替

36兆位( 1一M× 36/2的M×五百一十二分之一十八KX 72 )流通型SRAM 36-Mbit 1 M x 36/2 M x 18/512 k x 72 Flow-Through SRAM

CY7C1441AV33-133AXI和CY7C1441AV33-133AXC的区别

型号: CY7C1441AV33-133BZXI

品牌: 赛普拉斯

封装: FBGA

类似代替

36兆位( 1一M× 36/2的M×五百一十二分之一十八KX 72 )流通型SRAM 36-Mbit 1 M x 36/2 M x 18/512 k x 72 Flow-Through SRAM

CY7C1441AV33-133AXI和CY7C1441AV33-133BZXI的区别