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CY14E101J2-SXI

CY14E101J2-SXI

数据手册.pdf

1兆位( 128千× 8 )串行( I2C )的nvSRAM 1 Mbit 128 K × 8 Serial I2C nvSRAM

Overview

The Cypress CY14C101J/CY14B101J/CY14E101J combines a 1-Mbit nvSRAM[2] with a nonvolatile element in each memory cell. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements STORE operation takes place automatically at power-down except for CY14X101J1. On power-up, data is restored to the SRAM from the nonvolatile memory RECALL operation. The STORE and RECALL operations can also be initiated by the user through I2C commands.

Features

■ 1-Mbit nonvolatile static random access memory nvSRAM

   ❐ Internally organized as 128 K × 8

   ❐ STORE to QuantumTrap nonvolatile elements initiate automatically on power-down AutoStore or by using I2 command Software STORE or HSB pin Hardware STORE

   ❐ RECALL to SRAM initiated on power-up Power-U RECALL or by I2C command Software RECALL

   ❐ Automatic STORE on power-down with a small capacito except for CY14X101J1

■ High reliability

   ❐ Infinite read, write, and RECALL cycles

   ❐ 1 million STORE cycles to QuantumTrap

   ❐ Data retention: 20 years at 85 °C

■ High speed I2C interface[1]

   ❐ Industry standard 100 kHz and 400 kHz speed

   ❐ Fast-mode Plus: 1 MHz speed

   ❐ High speed: 3.4 MHz

   ❐ Zero cycle delay reads and writes

■ Write protection

   ❐ Hardware protection using Write Protect WP pin

   ❐ Software block protection for 1/4, 1/2, or entire array

■ I2C access to special functions

   ❐ Nonvolatile STORE/RECALL

   ❐ 8 byte serial number

   ❐ Manufacturer ID and Product ID

   ❐ Sleep mode

■ Low power consumption

   ❐ Average active current of 1 mA at 3.4 MHz operation

   ❐ Average standby mode current of 150 µA

   ❐ Sleep mode current of 8 µA

■ Industry standard configurations

   ❐ Operating voltages:

      • CY14C101J: VCC = 2.4 V to 2.6 V

      • CY14B101J: VCC = 2.7 V to 3.6 V

      • CY14E101J: VCC = 4.5 V to 5.5 V

   ❐ Industrial temperature

   ❐ 8- and 16-pin small outline integrated circuit SOIC package

   ❐ Restriction of hazardous substances RoHS compliant

CY14E101J2-SXI中文资料参数规格
技术参数

时钟频率 3.4 MHz

存取时间Max 900 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 4.5V ~ 5.5V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

海关信息

ECCN代码 3A991.b.2.a

CY14E101J2-SXI引脚图与封装图
CY14E101J2-SXI引脚图

CY14E101J2-SXI引脚图

CY14E101J2-SXI封装图

CY14E101J2-SXI封装图

CY14E101J2-SXI封装焊盘图

CY14E101J2-SXI封装焊盘图

在线购买CY14E101J2-SXI
型号 制造商 描述 购买
CY14E101J2-SXI Cypress Semiconductor 赛普拉斯 1兆位( 128千× 8 )串行( I2C )的nvSRAM 1 Mbit 128 K × 8 Serial I2C nvSRAM 搜索库存
替代型号CY14E101J2-SXI
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: CY14E101J2-SXI

品牌: Cypress Semiconductor 赛普拉斯

封装: 8-SOIC

当前型号

1兆位( 128千× 8 )串行( I2C )的nvSRAM 1 Mbit 128 K × 8 Serial I2C nvSRAM

当前型号

型号: CY14E101J2-SXIT

品牌: 赛普拉斯

封装: TSOP

完全替代

1兆位( 128千× 8 )串行( I2C )的nvSRAM 1 Mbit 128 K × 8 Serial I2C nvSRAM

CY14E101J2-SXI和CY14E101J2-SXIT的区别

型号: CY14B101J2-SXI

品牌: 赛普拉斯

封装: SOIC

类似代替

CY14B101 系列 1 Mb 128 K x 8 3.6 V nvSRAM - SOIC-16

CY14E101J2-SXI和CY14B101J2-SXI的区别

型号: CY14E101Q2A-SXI

品牌: 赛普拉斯

封装: TSOP

类似代替

NVRAM NVSRAM Serial-SPI 1Mbit 5V 8Pin SOIC Tube

CY14E101J2-SXI和CY14E101Q2A-SXI的区别