BCX5210TA

双极晶体管 - 双极结型晶体管BJT Pwr Mid Perf Transistor SOT89 T&R; 1K

- 双极 BJT - 单 PNP 60 V 1 A 150MHz 1 W 表面贴装型 SOT-89-3

得捷:
TRANS PNP 60V 1A SOT89-3

艾睿:
Design various electronic circuits with this versatile PNP BCX5210TA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Trans GP BJT PNP 60V 1A 3+Tab SOT89

TME:
Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89

DeviceMart:
TRANS PNP 60V 1A 1W SOT89

Win Source:
TRANS PNP 60V 1A SOT89