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BSZ040N06LS5ATMA1

BSZ040N06LS5ATMA1

数据手册.pdf
Infineon(英飞凌) 分立器件

N沟道 60V 40A

Description:

"s new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices" low gate charge Q g reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage V GSth allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

 

Summary of Features:

.
Low R DSon in small package
.
Low gate charge
.
Lower output charge
.
Logic level compatibility

Benefits:

.
Higher power density designs
.
Higher switching frequency
.
Reduced parts count wherever 5V supplies are available
.
Driven directly from microcontrollers slow switching
.
System cost reduction
BSZ040N06LS5ATMA1中文资料参数规格
技术参数

耗散功率 2.1 W

上升时间 4.6 ns

输入电容Ciss 2400pF @30VVds

下降时间 4.8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2100 mW

封装参数

引脚数 8

封装 TSDSON-8

外形尺寸

长度 3.3 mm

宽度 3.3 mm

高度 1.1 mm

封装 TSDSON-8

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Wireless charging

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

BSZ040N06LS5ATMA1引脚图与封装图
暂无图片
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