BLF888AS
数据手册.pdfUHF功率LDMOS晶体管 UHF power LDMOS transistor
General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Features and benefits
Excellent ruggedness VSWR 40 : 1 through all phases
Optimum thermal behavior and reliability, Rthj-c = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation 470 MHz to 860 MHz
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction ofHazardous Substances RoHS Directive 2002/95/EC
Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band