BFS505
数据手册.pdfBFS505 NPN三极管 20V 18mA 9Ghz 60~250 SOT-323/SC-70 marking/标记 NO 低频放大器
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 18mA 截止频率fTTranstion FrequencyfT| 9Ghz 直流电流增益hFEDC Current GainhFE| 60~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 150mW/0.15W Description & Applications| NPN 9 GHz wideband transistor FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope.It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment cellular phones, cordless phones, pagers up to 2 GHz. 描述与应用| NPN9 GHz的宽带 特点 低电流消耗 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 SOT323信封。 说明 NPN晶体管在一个塑料SOT323 envelope.It适用于低功率的放大器， 特别是在RF便携式通信设备（手机，无绳电话，寻呼机）高达2 GHz的振荡器和混频器。