BFP460

NPN硅晶体管RF NPN Silicon RF Transistor

Summary of Features:

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General purpose low noise amplifier for low voltage, low current applications

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High ESD robustness, typical 1500V HBM

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Low minimum noise figure 1.1 dB at 1.8 GHz

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High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz

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Easy to use standard package with visible leads

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Pb-free RoHS compliant package

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Qualification report according to AEC-Q101 available