BCR198T
数据手册.pdfBCR198T 带阻尼PNP三极管 -50V -70mA 70 0.25W/250mW SOT-523/SC-75 标记WR 开关电路，逆变器，接口电路，驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -70mA 基极输入电阻R1 Input ResistanceR1| 47KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 70 截止频率fT Transtion FrequencyfT| 190MHz 耗散功率Pc Power Dissipation| 0.25W/250mW Description & Applications| Feature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1= 47kΩ , R2= 47kΩ • For 6-PIN packages: two galvanic internalisolated transistors with good matching in one package 描述与应用| 特点 •PNP硅数字晶体管 •开关电路，逆变器，接口电路，驱动电路 •内置偏置电阻（R1=47KΩ，R2=47KΩ） •对于6-PIN封装：2（电流）的内部具有良好的匹配隔离晶体管在一个封装中