BSO303PHXUMA1
数据手册.pdfInfineon(英飞凌)
分立器件
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.017 ohm, -10 V, -1.5 V
MOSFET - 阵列 2 个 P 沟道（双） 30V 7A 2W 表面贴装型 PG-DSO-8
得捷:
MOSFET 2P-CH 30V 7A 8DSO
e络盟:
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.017 ohm, -10 V, -1.5 V
艾睿:
This BSO303PHXUMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
TME:
Transistor: P-MOSFET; unipolar; -30V; -7A; 2W; PG-DSO-8
Verical:
Trans MOSFET P-CH 30V 7A Automotive 8-Pin DSO T/R