BSC009NE2LSATMA1

INFINEON  BSC009NE2LSATMA1  晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC009NE2LSATMA1, 100 A, Vds=25 V, 8引脚 TSDSON封装

得捷:
MOSFET N-CH 25V 41A/100A TDSON

e络盟:
功率场效应管, MOSFET, N沟道, 25 V, 100 A, 750 µohm, TDSON, 表面安装

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSC009NE2LSATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R