BSS127H6327XTSA2

INFINEON  BSS127H6327XTSA2  场效应管, MOSFET, N沟道, 600V, 0.021A, SOT-23-3

SIPMOS® N 通道 MOSFET

立创商城:
N沟道 600V 21mA

得捷:
MOSFET N-CH 600V 21MA SOT23-3

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSS127H6327XTSA2, 21 mA, Vds=600 V, 3引脚 SOT-23封装

艾睿:
This BSS127H6327XTSA2 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23

Verical:
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R

Newark:
MOSFET, N CH, 600V, 0.021A, SOT-23-3

Win Source:
MOSFET N-CH 600V 21MA SOT23-3 / N-Channel 600 V 21mA Ta 500mW Ta Surface Mount PG-SOT23