BSC097N06NSATMA1

INFINEON  BSC097N06NSATMA1  晶体管, MOSFET, N沟道, 46 A, 60 V, 0.008 ohm, 10 V, 2.8 V 新

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC097N06NSATMA1, 46 A, Vds=60 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 60V 46A TDSON-8-6

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 46 A, 0.008 ohm, PG-TDSON, 表面安装

艾睿:
Make an effective common gate amplifier using this BSC097N06NSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 60V 46A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC097N06NSATMA1  MOSFET, N-CH, 60V, 46A, PG-TDSON-8 New